Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory
نویسندگان
چکیده
منابع مشابه
The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces.
Density functional theory calculations are performed to unravel the nature of the contact between metal electrodes and monolayer MoS2. Schottky barriers are shown to be present for a variety of metals with the work functions spanning over 4.2-6.1 eV. Except for the p-type Schottky contact with platinum, the Fermi levels in all of the studied metal-MoS2 complexes are situated above the midgap of...
متن کاملEnergetic mapping of oxide traps in MoS2 field-effect transistors
The performance of MoS2 transistors is strongly affected by charge trapping in oxide traps with very broad distributions of time constants. These defects degrade the mobility and additionally lead to the hysteresis of the gate transfer characteristics, which presents a crucial performance and reliability issue for these new technologies. Here we perform a detailed study of the hysteresis in dou...
متن کاملDefect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts
Understanding the electronic contact between molybdenum disulfide (MoS2) and metal electrodes is vital for the realization of future MoS2-based electronic devices. Natural MoS2 has the drawback of a high density of both metal and sulfur defects and impurities. We present evidence that subsurface metal-like defects with a density of ∼1011 cm-2 induce negative ionization of the outermost S atom c...
متن کاملSynthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
S. Fathipour, M. Remskar, A. Varlec, A. Ajoy, R. Yan, S. Vishwanath, S. Rouvimov, W. S. Hwang, H. G. Xing, D. Jena, and A. Seabaugh Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Solid State Physics Department, Jo!zef Stefan Institute, Ljubljana, Slovenia Department of Electrical Engineering, Cornell University, Ithaca, New York 14850, USA Departm...
متن کاملMoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts
For the first time, n-type few-layer MoS2 fieldeffect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-μm gate length with an ON-OFF current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in ON-resistance and a 3.3 times improvement in contact resistance with hetero...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Sciences
سال: 2020
ISSN: 2076-3417
DOI: 10.3390/app10082754